Cost-effective AlN template with a low threading desity (TDD) have been demonstrated by high-temperature annealing (HTA) technology. Concrete improvent in AlN template quality has been deomonstrated, but the improvement in actual UVC light-emtting diode (LED) performance seems to be few. Professor Chia-Yen Huang discovered the important role of vacancy-dislocation interaction in strain-management and overcame the inherent design trillema of UVC LED epitaxy. In collaboration with ITRI and FBH Germany, Professor Huang demonstrated a high-power 275 nm UVC LED with a low forward voltage and low droop up to I=1000 mA, which has a strong potential for future sterilization and disinfection applications. More details can be find in Professor Huang’s recent publication in Acta Materilia.